Hitachi 2SK2802
Silicon N Channel MOS FET
2SK2802 Specifications
- Drain-Source Resistance : 280mΩ
- Terminals : 3
- Max Power Dissipation : 150mW
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SK2802 |
|---|---|
| Datasheet | 2SK2802 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N Channel MOS FET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA)● 2.5V gate drive devices.
● Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±10 0.5 1.0 150 150 –55 to +150 Unit V V A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±10 — — 0.5 — — 0.7 — — — — — — — Typ — — — — — 0.2 0.3 1.2 14.0 68 3.0 0.27 1.5 2.2 2.15 Max — — 1.0 ±10 1.5 0.28 0.5 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS =...
