Hitachi 2SK2885L
Silicon N-Channel MOSFET
| Part No. | 2SK2885L |
|---|---|
| Datasheet | 2SK2885L Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 10mΩ typ.● 4V gate drive devices.
● High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 45 180 45 75 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2885(L), 2SK2885(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±20 — — 1.0 — — 20 — — — — — — — — — Typ — — — — — 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max — — 10 ±10 2.0 14 25 — — — — — — — — — — Unit V V µA µA V mΩ...
