Hitachi 2SK2939L
Silicon N-Channel MOSFET
| Part No. | 2SK2939L |
|---|---|
| Datasheet | 2SK2939L Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS =0.020 Ω typ.● High speed switching
● 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2939(L),2SK2939(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 14 — — — — — — — — — Typ — — — — — 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max — — ±10 10 2.5 0.026 0.050 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns...
