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2SK2957L Datasheet PDF

Hitachi 2SK2957L

Silicon N-Channel MOSFET

Part No. 2SK2957L
Datasheet 2SK2957L Download
Manufacturer
Hitachi
Description Silicon N-Channel MOSFET
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2SK2957L datasheet page 1 preview

FEATURES

● Low on-resistance R DS(on) = 7mΩ typ.
● 4V gate drive devices.
● High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S)

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150 –55 to +150 Unit V V A A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 25 — — — — — — — — — Typ — — — — — 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max — — 10 ±10 2.0 10 18 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 50A, VGS = 0 I F = 50A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS...
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