Hitachi 2SK2958L
Silicon N-Channel MOSFET
FEATURES
● Low on-resistance R DS(on) = 5.5mΩ typ.● 4V gate drive devices.
● High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 75 300 75 100 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 35 — — — — — — — — — Typ — — — — — 5.5 9.0 60 4100 2700 800 45 430 460 440 1.0 90 Max — — 10 ±10 2.0 7.0 14.0 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 75A, VGS = 0 I F = 75A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±16V...