Hitachi 2SK3082S
N-Channel MOSFET
| Part No. | 2SK3082S |
|---|---|
| Datasheet | 2SK3082S Download |
| Manufacturer |  Hitachi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 0.055 Ω typ.● High speed switching
● 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP Note3 Note3 Note2 10 8.5 30 150 –55 to +150 EAR Pch Tch Tstg 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3. Value at Tch = 25° C, Rg ≥ 50ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 5 — — — — — — — — — Typ — — — — — 0.055 0.090 8 350 190 70 10 55 60 70 0.9 50 Max — — ±10 10 2.5 0.075 0.150 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F...
