Hitachi 2SK3133L
N-Channel MOSFET
FEATURES
● Low on-resistance R DS(on) = 7 mΩ typ.● Low drive current
● 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note 1 Ratings 30 ±20 50 200 50 50 150 –55 to +150 Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr TBD — — — — — — — — — — — — Typ — — — — 7 12 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max — ±0.1 10 2.5 10 18 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, V...