Hitachi 2SK3135L
N-Channel MOSFET
FEATURES
● Low on-resistance R DS(on) = 6 mΩ typ.● Low drive current
● 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 3 2SK3135(L),2SK3135(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 100 150 –55 to +150 Unit V V A A A A mJ W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3135(L),2SK3135(S)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 60 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 — — — — — — — — — — — — Typ — — — — 6.0 8.0 80 7100 1000 300 125 25 25 60 300 520 330 1.05 90 Max — ±0.1 1...