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2SK741 - Silicon N-Channel MOSFET

Description

n 1S (T ho C 1.0 = t) 25 °C Operation in this area is ) limited by RDS (on) Drain Current ID (A) 10 10 1 m s Ta = 25°C 0.1 0 50 100 Case Temperature TC (°C) 150 1 100 10 1,000 Drain to Source Voltage VDS (V) www.DataSheet.co.kr Typical Output Characteristics 10 10 V 15 V 8 Drain Current ID

Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID.

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2SK741 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg www.DataSheet.co.
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