Hitachi 4AJ11
Silicon P-Channel Power MOS FET Array
| Part No. | 4AJ11 |
|---|---|
| Datasheet | 4AJ11 Download |
| Manufacturer |  Hitachi |
| Description | Silicon P-Channel Power MOS FET Array |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A● Capable of 4 V gate drive
● Low drive current
● High speed switching
● High density mounting
● Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings –60 ±20 –8 –32 –8 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AJ11ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to sourc...
