Hitachi 6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
6AM15 Specifications
- Drain-Source Resistance : 115mΩ
- Drain-Source Voltage : 60V
- Terminals : 12
- Max Power Dissipation : 4.8W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 6AM15 |
|---|---|
| Datasheet | 6AM15 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N/P Channel MOS FET High Speed Power Switching |
| Buy | Stock & Price |
FEATURES
● Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting●
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● Outline 6AM15
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3. Value at Ta = 25°C, Rg ≥ 50 Ω VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch (Tc = 25°C) Note2 Pch Note2 Tch Tstg 60 ±20 10 40 10 10 Pch –60 ±20 –10 –40 –10 –10 8.5 42 4.8 150 –55 to +150 V V A A A A mJ W W °C °C UnitELECTRICAL CHARACTERISTICS
(N Channel) (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut...
