BB502 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Product Overview

Hitachi

Part number	BB502
Manufacturer	Hitachi
File Size	64.94 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB502 Datasheet
Additional preview pages of the BB502 datasheet.

Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. 2. Marking is “BS.
”. BB502C is individual type number of HITA.

📁 Similar Datasheet

BB504C - Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier (Hitachi Semiconductor)
BB505B - Silicon Variable Capacitance Diodes (Siemens Semiconductors)
BB505C - Build in Biasing Circuit MOS FET IC (Renesas Technology)
BB505G - Silicon Variable Capacitance Diodes (Siemens Semiconductors)
BB505M - Build in Biasing Circuit MOS FET IC (Renesas Technology)
BB506C - Built in Biasing Circuit MOS FET IC UHF RF Amplifier (Renesas Technology)
BB506M - Built in Biasing Circuit MOS FET IC UHF RF Amplifier (Renesas Technology)
BB510 - (BB5xx) Soild State Tuner Components (ITT)

Other Datasheets by Hitachi

Published: Jun 3, 2005 |