• Part: BB601M
  • Description: Build in Biasing Circuit MOS FET IC UHF RF Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 67.13 KB
Download BB601M Datasheet PDF
Hitachi Semiconductor
BB601M
BB601M is Build in Biasing Circuit MOS FET IC UHF RF Amplifier manufactured by Hitachi Semiconductor.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C (Z) 4th. Edition Nov. 1998 Features - Build in Biasing Circuit; To reduce using parts cost & PC board space. - High gain; PG = 21.5 dB typ. at f = 900 MHz - Low noise; NF = 1.85 dB typ. at f = 900 MHz - Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. - Provide mini mold packages; MPAK-4R(SOT-143mod) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “AT- ”. 2. BB601M is individual type number of HITACHI...