BB601M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C (Z) 4th. Edition Nov.

Datasheet Details

Part number	BB601M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	67.13 KB
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet	BB601M_HitachiSemiconductor.pdf

Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain; PG = 21.5 dB typ. at f = 900 MHz.
Low noise; NF = 1.85 dB typ. at f = 900 MHz.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143mod) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “AT.
”. 2. BB601M is individual type number of HI.

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