C5461 - Silicon NPN Transistor

Datasheet Summary

Features

High breakdown voltage VCBO = 1500 V.
High speed switching tf = 0.15 µsec(typ. ) at fH=64kHz.
Isolated package TO.
3PFM Outline TO.
3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Sto.

Hitachi

📥 Download Datasheet

Datasheet Details

Part number	C5461
Manufacturer	Hitachi
File Size	42.24 KB
Description	Silicon NPN Transistor
Datasheet	C5461 Datasheet
Additional preview pages of the C5461 datasheet.

📁 Similar Datasheet

C5460 - 2SC5460 (Toshiba)
C5460 - APD module (Hamamatsu Corporation)
C5463 - 2SC5463 (Toshiba)
C5464 - 2SC5464 (Toshiba)
C5465 - 2SC5465 (Toshiba)
C5466 - 2SC5466 (Toshiba)
C5468 - 2SC5468 (Toshiba)
C5404 - 2SC5404 (Toshiba Semiconductor)
C5406 - Silicon NPN triple diffusion mesa type Power Transistors (Panasonic)
C5406A - Silicon NPN triple diffusion mesa type Power Transistors (Panasonic)

Other Datasheets by Hitachi

C5462 - Silicon NPN Transistor
C5469 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text

2SC5461 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM Outline TO–3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.

Published: Aug 8, 2019 |