D1135
D1135 is 2SD1135 manufactured by Hitachi Semiconductor.
2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier plementary pair with 2SB859
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC
- 1 Tj Tstg
Ratings 100 80 5 4 8 40 150
- 45 to +150
Unit V V V A A W °C °C
2SD1135
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO voltage
- Emitter to base breakdown voltage
V(BR)EBO
- Collector cutoff current DC current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage
I CBO h FE1- 1 h FE2 VBE VCE(sat)
- 60 35
- -
- -
- -
- Gain bandwidth product f T
- 10
Collector output capacitance...
