D2256 - Silicon NPN Triple Diffused

Datasheet Summary

Features

High breakdown voltage and high current (VCEO = 120 V, I C = 25 A).
Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VE.

Hitachi

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Datasheet Details

Part number	D2256
Manufacturer	Hitachi
File Size	31.96 KB
Description	Silicon NPN Triple Diffused
Datasheet	D2256 Datasheet
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2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C.

Published: Sep 23, 2014 |