D2256 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) - Built-in C-E diode Outline TO-3P 1 1. Base 2. Collector (Flange) 3. Emitter ID 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg ID- 1 1 Ratings 120 120 7 25 35 120 150 - 55 to +150 25 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 120 7 - - 2000 500 - - - - - - - - Typ - - - - - - - Max - - - - 10 10 20000 - 2.0 3.5 3.0 4.5 V V V V Unit V V V V µA µA Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I C = 200 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 4 V, IC = 12 A- 1 VCE = 4 V, IC = 25 A- 1 I C = 12 A, IB = 24 m A- 1 I C = 25 A, IB = 250 m A- 1 I C = 12 A, IB = 24 m A- 1 I C = 25 A, IB = 250 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio h FE1 h FE2 Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2SD2256 Maximum Collector Dissipation Curve 120 Collector power dissipation PC (W) 100 i C(peak) Collector current IC (A) 30 IC(max) 10 Area of Safe Operation 1m...