H5N5006LS Datasheet PDF

FEATURES

● Low on-resistance
● Low leakage current
● High speed switching
● Low gate charge
● Avalanche ratings Outline LDPAK G w w w a .D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .c m o Rev.0 Aug.2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain w w w .D at h S a t e e 4U . m o c H5N5006LD, H5N5006LS, H5N5006LM

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 Note 1 Value 500 ±30 3.5 14 3.5 3.5 50 2.5 150 –55 to +150 Unit V V A A A A W °C/W °C °C Pch Note 2 θch-c Tch Tstg Rev.0, Aug. 2002, page 2 of 12 H5N5006LD, H5N5006LS, H5N5006LM

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min 500 — — 3.0 1.8 — — — — — — — — —...