Hitachi HA1127P
5 Transistor Arrays
| Part No. | HA1127P |
|---|---|
| Datasheet | HA1127P Download |
| Manufacturer |  Hitachi |
| Description | 5 Transistor Arrays |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector base voltage Collector substrate voltage Collector emitter voltage Emitter-base voltage Collector current Allowable collector power Allowable collector power Symbol VCBO VCIO VCEO VEBO IC PC* PC Topr Tstg 1 HA1127 20 20 15 5 50 300 750* 625* 2 3 Unit V V V V mA mW mW Operating temperature Storage temperature –55 to +125 –55 to +125 °C °C Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 mW/°C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that temperature. 3. See page 51. 504 HA1127, HA1127P, HA1127FPELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-substrate breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current...
