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HAT1021R Datasheet PDF

Hitachi HAT1021R

Silicon P-Channel Power MOSFET

Part No. HAT1021R
Datasheet HAT1021R Download
Manufacturer
Hitachi
Description Silicon P-Channel Power MOSFET
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HAT1021R datasheet page 1 preview

FEATURES

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● Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 20 ± 10 – 5.5 – 44 – 5.5 Unit V V A A A W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 2.5 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min – 20 ± 10 — — – 0.5 — — 6 — — — — — — — — — Typ — — — — — 0.048 0.065 9.5 1200 630 200 20 120 175 140 – 0.9 65 Max — — ± 10 – 10 – 1.5 0.060 0.085 — — — — — — — — – 1.4 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = – 5.5 A, VGS = 0 Note3 IF = – 5.5 A, VGS...
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