Hitachi HAT2019R
Silicon N-Channel Power MOSFET
| Part No. | HAT2019R |
|---|---|
| Datasheet | HAT2019R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2019R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 12 8 64 8 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10sELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 ± 12 — — 0.5 — — 10 — — — — — — — — — Typ — — — — — 0.020 0.027 16 920 550 225 25 180 165 185 0.8 60 Max — — ± 10 10 1.5 0.027 0.037 — — — — — — — — 1.3 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 8 A , VGS = 0 Note3 IF = 8 A, VGS = 0 diF/ dt = 20 A/µs Test Con...
