Hitachi HAT2024R
Silicon N-Channel Power MOSFET
| Part No. | HAT2024R |
|---|---|
| Datasheet | HAT2024R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 34 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S 3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch * Tch Tstg 3 1 Ratings 30 ±20 5.5 44 5.5 2 3 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 HAT2024RELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V...
