Datasheet4U.com

HAT2026R Datasheet PDF

Hitachi HAT2026R

Silicon N-Channel Power MOSFET

Part No. HAT2026R
Datasheet HAT2026R Download
Manufacturer
Hitachi
Description Silicon N-Channel Power MOSFET
Buy Stock & Price
HAT2026R datasheet page 1 preview

FEATURES

●
●
●
● Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2026R

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 20 ± 12 11 88 11 2.5 150 – 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min 20 ± 12 — — 0.4 — — 18 — — — — — — — — — Typ — — — — — 0.011 0.014 27 1760 1130 450 35 275 300 340 0.83 75 Max — — ± 10 1 1.4 0.015 0.021 — — — — — — — — 1.08 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 11 A, VGS = 0 Note3 IF = 11 A, VGS = 0 diF/ dt = 20 A/µs Te...
HAT2026R page 2 preview HAT2026R page 3 preview