Hitachi HAT2033R
Silicon N-Channel Power MOSFET
FEATURES
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● For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2033R/HAT2033RJ
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2033R HAT2033RJ Avalanche energy HAT2033R HAT2033RJ Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings 60 ± 20 7 56 7 — 7 Unit V V A A A — A — mJ W °C °C EAR Note4 — 4.2 2.5 150 – 55 to + 150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. Value at Tch=25°C, Rg≥50Ω 2 HAT2033R/HAT2033RJELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak...