Hitachi HAT2039R
Silicon N-Channel Power MOSFET
| Part No. | HAT2039R |
|---|---|
| Datasheet | HAT2039R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2039R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 12 8.0 64 8.0 2.0 3.0 150 – 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10sELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 30 — — 0.4 — — 13 — — — — — — — — — — — — Typ — — — — 0.017 0.022 20 1420 410 260 20 12 8 23 165 215 185 0.85 30 Max — ±...
