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HAT2040R Datasheet PDF

Hitachi HAT2040R

Silicon N-Channel Power MOSFET

Part No. HAT2040R
Datasheet HAT2040R Download
Manufacturer
Hitachi
Description Silicon N-Channel Power MOSFET
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HAT2040R datasheet page 1 preview

FEATURES

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● Capable of 4 V gate drive Low drive current High density mounting Low on-resistance R DS(on) =6.2m typ Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2040R

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 15 120 15 2.5 150 –55 to +150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 HAT2040R

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 30 — — 1.0 — — 18 — — — — — — — — — — — — Typ — — — — 6.2 9.0 30 4400 950 400 90 15 18 110 440 160 170 0.9 55 Max — ±0.1 1 2.5 8.0 13...
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