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HAT2054M Datasheet PDF

Hitachi HAT2054M

Silicon N-Channel Power MOSFET

Part No. HAT2054M
Datasheet HAT2054M Download
Manufacturer
Hitachi
Description Silicon N-Channel Power MOSFET
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HAT2054M datasheet page 1 preview

FEATURES

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● Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 3 2 1 1 2 5 6 D D D D 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2054M

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID* 2 1 Ratings 30 ±20 6.3 25.2 6.3 2 3 Unit V V A A A W W °C °C I D(pulse) * I DR* 2 Pch (pulse)* 2.0 1.05 150 –55 to +150 Pch (continuous) * Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min 30 — — 1.0 — — 4 — — — — — — — — — Typ — — — — 26 40 7 620 170 110 13 90 50 40 0.95 (50) Max — ±0.1 1 2.5 31 52 — — — — — — — — — — Unit V µA µA V mΩ mΩ...
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