HAT2096H
Features
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5 D
3 1 2
4 G
1, 2, 3 Source 4 Gate 5 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 40 160 40 20 150
- 55 to + 150
Unit V V A A A W °C °C
Rev.2, Aug. 2002, page 2 of 10
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min 30 ± 20
- - 1.0
- - 30
- -
- -
- -
- -
- -
- - Typ
- -
- -
- 4.2 7.0 50 2200 600 330 40 7 8 20 49 62 15 0.85 60 Max
- - ± 10 1 2.5 5.3 10
- -
- -
- -...
