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w Features w w • Low on-resistance
HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power Switching e e h S a ADE-208-500I (Z) at 10th. Edition D Aug. 1997 .
• Capable of 4 V gate drive • Low drive current • High density mounting
Outline
SOP–8
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2 G
.D
S1
7 8 D D
t a
4 G
S a
8 5 7 6 5 6 D D S 3
e h
t e
U 4
.c
m o
34 1 2
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch
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.D
a t a
e h S
4 t e
U
.