HAT3004R
Features w w
- Low on-resistance
HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power Switching e e h S a ADE-208-500I (Z) at 10th. Edition D Aug. 1997 .
- Capable of 4 V gate drive
- Low drive current
- High density mounting
Outline
SOP- 8 w w w
2 G
.D
S1
7 8 D D t a
4 G
S a
8 5 7 6 5 6 D D S 3 e h t e
U 4
.c m o
34 1 2
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch w w w
.D a t a e h S
4 t e
. m o c
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Unit Pch
- 30 ±20
- 3.5
- 28
- 3.5 V V A A A W W °C °C
30 ±20 5.5 44 5.5 2 3 150
- 55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x...
