Hitachi HAT3004R
Silicon N-Channel / P-Channel Power MOSFET
| Part No. | HAT3004R |
|---|---|
| Datasheet | HAT3004R Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel / P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
w w● Low on-resistance HAT3004R m o c . Silicon N Channel U / P Channel Power MOS FET 4 High t Speed Power Switching e e h S a ADE-208-500I (Z) at 10th. Edition D Aug. 1997 .
● Capable of 4 V gate drive
● Low drive current
● High density mounting Outline SOP–8 w w w 2 G .D S1 7 8 D D t a 4 G S a 8 5 7 6 5 6 D D S 3 e h t e U 4 .c m o 34 1 2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch w w w .D a t a e h S 4 t e U . m o c HAT3004R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Unit Pch –30 ±20 –3.5 –28 –3.5 V V A A A W W °C °C 30 ±20 5.5 44 5.5 2 3 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive ope...
