Hitachi HAT3008RJ
Silicon N/P Channel Power MOSFET
| Part No. | HAT3008RJ |
|---|---|
| Datasheet | HAT3008RJ Download |
| Manufacturer |  Hitachi |
| Description | Silicon N/P Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
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● For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Unit Pch – 60 ± 20 – 3.5 – 28 – 3.5 V V A A A VDSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note1 60 ±20 5 40 5 — 5 — – 3.5 — 1.05 2 3 150 –55 to + 150 — A — mJ W W °C °C EAR — 2.14 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epox...
