Hitachi HAT3010R
Silicon N/P Channel Power MOSFET
FEATURES
● Low on-resistance● Capable of 4.5 V gate drive
● High density mounting Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3010R
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg Note2 Note3 Note1 Unit Pch –60 ±20 –5 –40 –5 2 3 150 –55 to +150 V V A A A W W °C °C 60 ±20 6 48 6 2 3 150 –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.6, Feb. 2002, page 2 of 14 HAT3010RELECTRICAL CHARACTERISTICS
(Ta = 25°C)● N Channel Item Symbol Min 60 ±20 — — 1.0 — — 7 — — — — — — — — — Typ — — — — — 30 4...