Hitachi HD155121F
The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF LNAs, two first mixers, a second mixer, a programmable gain amplifier, and an IQ demodulator for the receiver, and an IQ modulator and offset PLL for the transmitter. These functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package.DESCRIPTION
Also, on chip are dividers for the phase splitter. Moreover the HD155121F includes control circuits to implement power saving modes. Hence the HD155121F can form a small size transceiver handset for dual band by adding a dual PLL frequency synthesizer IC, power amplifiers and some external components. The HD155121F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process. Functions Receiver(Rx)●
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● Low Noise Amplifier (LNA) bias circuit First mixer IF amplifier and second mixer Programmable Gain Amplifier (PGA) IQ demodulator with 90 degree phase splitter Transmitter(Tx)
● IQ modulator with 90 degree phase splitter
● Offset PLL Down converter Phase comparator TXVCO driver Others
● IF dividers
● Power saving control circuit
● IFVCO HD155121F
FEATURES
● Highly integrated RF processing for hand-portables● Operating supply voltage VCC : 2.7 to 3.6 V Phase comparator and TXVCO driver circuit : 2.7 to 5.25 V
● Current consumption Rx mode (GSM) : 53 mA +...