HE7601SG Datasheet | Hitachi Semiconductor

Description The HE7601SG is a 770 nm band Ga Al As infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features - High efficiency and high output power Package Type - HE7601SG: SG1 Internal Circuit Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 - 20 to +60 - 40 to +90 Unit m A V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 30 740 - - - - - - Typ - 770 50 - - 30 10 10 Max - 800 60 2.5 100 - - - Unit m W nm nm V µA p F ns ns Test Conditions IF = 200 m A IF = 200 m A IF = 200 m A IF = 200 m A VR = 3 V VR = 0 V, f = 1 MHz IF = 50 m A IF = 50 m A Rev.2, Mar. 2005, page 2 of 6 Typical Characteristic Curves Optical Output Power vs. Forward Current 50 Optical output power, PO (m W) Forward Current vs. Forward Voltage 250 Forward current, IF (m A) TC = - 20°C 40 25°C 30 20 10 60°C 0 0 50 100 150 200 250 Forward current, IF (m A) 0°C 40°C 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF (V) TC = - 20°C 25°C 60°C Spectral Distribution Relative radiation intensity (%) Pulse Response Current pulse TC = 25°C Relative intensity 100 80 60 40 20 0 TC = 25°C Optical pulse -...