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HE7601SG - GaAlAs Infrared Emitting Diode

Description

The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.

It is suitable as a light source for optical control devices and sensors.

Features

  • High efficiency and high output power Package Type.
  • HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3.
  • 20 to +60.
  • 40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbo.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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