Hitachi HE8807FL
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.| Part No. | HE8807FL |
|---|---|
| Datasheet | HE8807FL Download |
| Manufacturer |  Hitachi |
| Description | GaAlAs Infrared Emitting Diodes |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
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● High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 –20 to +85 –40 to +100 Units mA V °C °C 245 HE8807SG/FL Optical andELECTRICAL CHARACTERISTICS
(TC = 25°C) Item Optical output power HE8807SG HE8807FL Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Note: Symbol PO PF* λp ∆λ VF IR Ct tr tf 1 Min 10 0.5 800 — — — — — — Typ 20 1.0 880 30 1.7 — 10 20 20 Max — — 900 — 2.3 100 — — — Units mW Test Conditions I F = 150 mA I F = 20 mA nm nm V µA pF ns ns I F = 150 mA I F = 150 mA I F = 150 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA I F = 50 mA 1. PF specification: The optical output within 9 degrees of the acceptance angle. Typical Characteristic Curves 246 HE8807SG/FL...
