HE8811 Datasheet | Hitachi Semiconductor

Description The HE8811 is a Ga Al As infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam munication equipment. Features - High-frequency response - High efficiency and high output power - Broad radiation pattern Package Type - HE8811: SG1 Internal Circuit Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3 - 20 to +60 - 40 to +90 Unit m A V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 20 780 - - - - - - Typ 30 820 50 - - 10 5 7 Max - 900 - 2.5 100 - - - Unit m W nm nm V µA p F ns ns Test Conditions IF = 150 m A IF = 150 m A IF = 150 m A IF = 150 m A VR = 3 V VR = 0 V, f = 1 MHz IF = 50 m A IF = 50 m A Rev.2, Mar. 2005, page 2 of 6 Typical Characteristic Curves Optical Output Power vs. Forward Current 40 Optical output power, PO (m W) Forward current, IF (m A) Forward Current vs. Forward Voltage 200 - 2 0 °C = °C 60 °C 150 TC = 0°C 100 25°C - 20°C...