HE8811 - GaAlAs Infrared Emitting Diode

Product Overview

Hitachi

Part number	HE8811
Manufacturer	Hitachi
File Size	212.31 KB
Description	GaAlAs Infrared Emitting Diode
Datasheet	HE8811 Datasheet
Additional preview pages of the HE8811 datasheet.

The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.

High-frequency response.
High efficiency and high output power.
Broad radiation pattern Package Type.
HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3.
20 to +60.
40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forwa.

📁 Similar Datasheet

HE8812SG - GaAlAs Infrared Emitting Diode (Hitachi Semiconductor)
HE8807FL - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes (Hitachi Semiconductor)
HE8807SG - (HE8807FL/SG) GaAlAs Infrared Emitting Diodes (Hitachi Semiconductor)
HE801 - Connectors (Amphenol)
HE80128L - 8-bit CMOS micro-controller (Jess Technology)
HE80128M - 8-bit CMOS micro-controller (Jess Technology)
HE80128S - 8-bit CMOS micro-controller (Jess Technology)
HE80170L - HE80170L (Jess Technology)

Other Datasheets by Hitachi

Published: Dec 30, 2006 |