Hitachi HL8325G
The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.- Max Operating Temp : 60°C
- Min Operating Temp : -10°C
Source:
Octopart
| Part No. | HL8325G |
|---|---|
| Datasheet | HL8325G Download |
| Manufacturer |  Hitachi |
| Description | GaAlAs Laser Diode |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
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● Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode 190 HL8325G
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 40 50* 2 30 –10 to +60 –40 to +85 1 Units mW mW V V °C °C 1. Maximum 50% duty cycle, maximum 1 µs pulse width Optical andELECTRICAL CHARACTERISTICS
(TC = 25 ± 3 °C) Item Optical output power Threshold current Slope efficiency Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol PO Ith η λp θ// θ⊥ Is AS Min 40 — 0.4 820 7 18 20 — Typ — 40 0.5 830 10 22 40 5 Max — 70 0.9 840 14 32 130 — Unit mW mA mW/mA nm deg. deg. µA µm 24 mW/ I (32 mW) – I (8 mW) PO = 40 mW PO = 40 mW, FWHM PO = 4...
