Part HM5117400B
Description 4M DRAM
Manufacturer Hitachi Semiconductor
Size 699.18 KB
Hitachi Semiconductor
HM5117400B

Overview

  • Single 5 V ( ± 10%)
  • High speed  Access time : 60 ns/ 70 ns/ 80 ns (max)
  • Low power dissipation  Active mode : 605 mW/550 mW/495 mW(max)  Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)
  • Fast page mode capability
  • Long refresh period  2048 refresh cycles : 32 ms : 128 ms (L-version)
  • 3 variations of refresh  RAS -only refresh  CAS -before-RAS refresh  Hidden refresh
  • Battery backup operation (L-version)
  • Test function  16-bit parallel test mode This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS INSTRUMENTS. 4U DataSheet 4 U .com