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HM6207H Datasheet 256k High Speed Sram

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HM6207H Series 256 k High Speed SRAM (256-kword × 1-bit).

General Description

Pin Name A0–AI7 Din Dout &6 :( VCC VSS Function Address Data input Data output Chip select Write enable Power supply Ground 2 HM6207H Series Block Diagram A15 A16 A17 A0 A1 A2 A3 A4 Din Row decoder Memory array 256 × 1024 VCC VSS Column I/O Column decoder Dout CS WE A9 A14 A13 A12A11 A10 A8 A7 A6 A5 Function Table &6 H L L :( × H L Mode Not selected Read Write VCC Current I/O Pin ISB, ISB1 lCC ICC High-Z Dout High-Z Ref.

Cycle — Read cycle Write cycle Note: × = Don’t care.

Absolute Maximum Ratings Parameter Voltage on any pin relative to VSS Power dissipation Operating temperature range Storage temperature range Storage temperature range under bias Note: Symbol Vin PT Topr Tstg Tbias Value –0.5 to +7.0 1.0 0 to +70 –55 to +125 –10 to +85 *1 Unit V W °C °C °C 1.

Key Features

  • Single 5 V supply and high density 24-pin package.
  • High speed Access time: 25/35/45 ns (max).
  • Low power  Operation: 300 mW (typ)  Standby: 100 µW (typ) 30 µW (typ) (L-version).
  • Completely static memory required, no clock or timing strobe required.
  • Equal access and cycle time.
  • Directly TTL compatible, all inputs and outputs.
  • Battery backup operation capability (L-version) Ordering Information Type No. HM6207HP-25 HM6207HP-35 HM620.

HM6207H Distributor