Hitachi HRW0503A
Silicon Schottky Barrier Diode for Rectifying
| Part No. | HRW0503A |
|---|---|
| Datasheet | HRW0503A Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Rectifying |
| Buy | Stock & Price |
FEATURES
● Low forward voltage drop and suitable for high effifiency rectifying.● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRW0503A Laser Mark S6 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HRW0503A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V *1 RRM Value 30 500 Unit V mA A °C °C I o*1 IFSM Tj *2 5 125 -55 to +125 Tstg 1. See from Fig.1 to Fig.5, with polyimide board 2. 50Hz sine wave 1 pulseELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ — — 65 Max 0.55 50 — Unit V µA pF Test Condition I F = 500 mA VR = 30V VR = 0V, f = 1MHz 2 HRW0503A Main Characteristic 1.0 Tj=25 °C 10 –1 Tj=125 °C Forward current I F (A) 10 –1 Reverse current I R (A) 0 0.2 0.4 0.6 0.8 10 –2 10 –2 10 –3 10 –3 0 5 10 15 20 25 30 Forward voltage V F (V) Fig.1 Forward current Vs.
