Hitachi HSM198S
Silicon Schottky Barrier Diode
| Part No. | HSM198S |
|---|---|
| Datasheet | HSM198S Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
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● Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM198S Laser Mark C6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM198S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Two device total Symbol VR I O* Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C)*1 Item Forward voltage Reverse current Forward current Capacitance Capacitance deviation Rectifier efficiency ESD Capability Symbol VF IR IF C ∆V F η — Min — — 4.5 — — 70 30 Typ — — — — — — — Max 1.1 70 — 1.5 10 — — Unit V µA mA pF mV % V Test Condition I F = 5mA VR = 6V VF = 1V VR = 1V, f = 1MHz I F = 5mA Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20pF * 2C = 200pF, Both forward and reverse direction 1 pulse Notes: 1.
