Hitachi HSM221C
Silicon Epitaxial Planar Diode
FEATURES
● Low capacitance, proof against high voltage.● Fast recovery time.
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM221C Laser Mark A2 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM221C
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1µs forward surge current. Symbol VRM VR I FM I FSM * IO Tj Tstg Value 85 80 300 4 100 125 –55 to +125 Unit V V mA A mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time IR C t rr Min — — — — — — Typ 0.76 0.88 0.97 — 0.5 — Max 1.0 1.0 1.2 0.1 2.0 3.0 µA pF ns Unit V Test Condition I F = 10mA I F = 50mA I F = 100mA VR = 80V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, RL = 50Ω HSM221C 10 –1 Forward current I F (A) 10 –2 10 –3 =7 5°C 10 –5 10 –6 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Ta 10 Ta –4 Ta =2 5°C =– 25° C 1.0 Fig.1 Forward current Vs.