Hitachi HSM2692
Silicon Epitaxial Planar Diode
FEATURES
● Low forward resistance. (rf = 0.9 max)● Low capacitance. (C = 1.2pFmax)
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2692 Laser Mark B1 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM2692
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Symbol VR Pd Tj Tstg Topr Value 35 150 125 –45 to +125 –20 to +60 Unit V mW °C °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol VR IR VF C rf Min 35 — — — — Typ — — — — — Max — 50 1.0 1.2 0.9 Unit V nA V pF Ω Test Condition I R = 10µA VR = 25V I F = 10mA VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 2.0 f = 100MHz Forward resistance r f (Ω ) 1.5 1.0 0.5 0 10–4 10–3 Forward current I F (A) 10–2 Fig.1 Forward resistance Vs. Forward current 2 HSM2692 10 f = 1MHz Capacitance C (pF) 1.0 10 –1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs.