Hitachi HSM88WK
Silicon Schottky Barrier Diode for Balanced Mixer
| Part No. | HSM88WK |
|---|---|
| Datasheet | HSM88WK Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Balanced Mixer |
| Buy | Stock & Price |
FEATURES
● Proof against high voltage.● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WK Laser Mark C4 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM88WK
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Notes 1.Per one device Symbol VR IO *1 Value 10 15 125 –55 to +125 Unit V mA °C °C Tj TstgELECTRICAL CHARACTERISTICS
(Ta = 25°C) *1 Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *2 Typ — — — — — — — — Max 420 580 0.2 10 0.85 0.10 10 — Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V 350 500 — — — — — 30 C ∆C ∆ VF — pF pF mV V VR = 0V, f = 1 MHz VR = 0V, f = 1 MHz I F = 10 mA C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Per one device Notes 2. Failure criterion ; IR ≥ 400nA at VR =2 V 2...
