Hitachi HSU227
Silicon Schottky Barrier Diode for High Speed Switching
| Part No. | HSU227 |
|---|---|
| Datasheet | HSU227 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for High Speed Switching |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C=3.0pF max)● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSU227
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50 *2 Unit V mA mA °C °C IFSM Tj 200 125 -55 to +125 Tstg 1. 10msec sine wave 1 pulseELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ 0.29 0.3 2.45 Max 0.35 2.0 3.0 Unit V µA pF Test Condition I F = 1mA VR = 20V VR = 1V, 1=1MHz 2 HSU227 Main Characteristic 1.0 Pulse test 10 Forward current IF (A) -1 10 -4 Pulse test 10 -5 10 -2 10-3 Reverse current I R (A) 10 -6 10 -4 -5 10 10 -7 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 10-8 0 5 10 15 20 25 Reverse voltage VR (V) Fig.2 Reverse current Vs.
