Hitachi HSU276A
Silicon Schottky Barrier Diode for Mixer
| Part No. | HSU276A |
|---|---|
| Datasheet | HSU276A Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Mixer |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU276A Laser Mark S5 Package Code URP Outline Cathode mark Mark 1 S5 2 1. Cathode 2. Anode HSU276A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 -55 to +125 Unit V V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — — Max — 50 — 0.85 — Unit V µA mA pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100 µA at V R =0.5 V 2 HSU276A Main Characteristic 10 -1 10 -2 Reverse current I R (A) (A) 10 -2 10 -3 Forward current IF 1...
