Hitachi HVC376B
Variable Capacitance Diode
FEATURES
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● High capacitance ratio (n=4.3min) and good C-V linearity. High Q circuit can be composed due to low series resistance. (rs=0.8Ωmax) To be usable at low voltage. Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HVC376B Laser Mark B9 Package Code UFP Outline Cathode mark Mark 1 B9 2 1. Cathode 2. Anode HVC376B
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 –55 to +125 Unit V °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min — — 25.0 4.8 4.3 — Typ — — — — — — Max 10 100 28.5 6.8 — 0.8 — Ω pF Unit nA Test Condition VR = 10V VR = 10V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz 2 HVC376B Main Characteristic 10–9 50 f = 1MHz 40 Reverse current I R (A) 10–10 (pF) 30 10 –11 Capacitance C 20 10 –12 10 10–13 0 4 8 12 16 20 0 –1 10 1.0 Reverse voltage V R (V) 10 Reverse voltage V R (V) Fig.1 Reverse current Vs.