Hitachi HVM14
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
| Part No. | HVM14 |
|---|---|
| Datasheet | HVM14 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator |
| Buy | Stock & Price |
FEATURES
● Low forward resistance. (rf = 7.0 max)● Low capacitance. (C = 0.25pFtyp)
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM14 Laser Mark H5 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HVM14
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 100 125 –55 to +125 Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf — Min — — — — 200 Typ — — 0.25 — — Max 1.0 100 — 7.0 — Unit V nA pF Ω V Test Condition I F = 50mA VR = 50V VR = 50V, f = 1MHz I F = 10mA, f = 100MHz *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; IR ≥ 200nA at VR = 50V 10 –1 10 Forward current I F (A) –3 10 –5 10 –7 10 –9 10 –11 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current Vs.
