• Part: HZM43FA
  • Description: Silicon Epitaxial Planar Zener Diode for Surge Absorb
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 32.97 KB
Download HZM43FA Datasheet PDF
Hitachi Semiconductor
HZM43FA
HZM43FA is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features - HZM4.3FA has four devices, and can absorb external + and -surge. - MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM4.3FA Laser Mark 43A Package Code MPAK-5 Outline 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM4.3FA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg - 1 Value 200 150 - 55 to +150 Unit m W °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) - 2 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability - 1 Symbol VZ IR C rd - Min 4.01 - - - 30 Typ - - - - - Max 4.48 10 150 130 - Unit V µA p F Ω k V Test Condition I Z = 5 m A, 40ms pulse VR = 1V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse Notes: 1. Failure criterion ; IR ≥ 10 µA at VR = 1V. 2. Per one device. HZM4.3FA Main Characteristic 10 1.0 (A) Iz Zener Current...