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HZM5.6ZFA - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • HZM5.6ZFA has four devices, and can absorb external + and -surge.
  • Low capacitance (C=8.5pF max) and can protect ESD of signal line.
  • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM5.6ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Sto.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HZM5.6N Silicon Epitaxial Planar Zener Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-796 (Z) Rev 0 May. 1999 Features • HZM5.6ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM5.6ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, See Fig.2.