• Part: HZM62ZFA
  • Description: Silicon Epitaxial Planar Zener Diode for Surge Absorb
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 31.42 KB
Download HZM62ZFA Datasheet PDF
Hitachi Semiconductor
HZM62ZFA
HZM62ZFA is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features - HZM6.2ZFA has four devices, and can absorb external + and -surge. - Low capacitance (C=8.5p F max) and can protect ESD of signal line. - MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2ZFA Laser Mark 62Z Package Code MPAK-5 Outline 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.2ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg - 1 Value 200 150 - 55 to +150 Unit m W °C °C 1. Four device total, See Fig.2. Electrical Characteristics (Ta = 25°C) - 1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability - 2 Symbol VZ IR C rd - Min 5.90 - - - 13 Typ - - 8.0 - - Max 6.50 3 8.5 60 - Unit V µA p F Ω k V Test Condition I Z = 5 m A, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5V. HZM6.2ZFA Main...