HZS4 Datasheet | Hitachi Semiconductor

Features - - - Low leakage, low zener impedance and maximum power dissipation of 400 m W are ideally suited for stabilized power supply, etc. Wide spectrum from 1.5V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Mark Type No. Package Code MHD Outline Type No. Cathode band 1. Cathode 2. Anode HZS Series Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 -55 to +175 Unit m W °C °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)- 1 Type HZS1 HZS2 Grade C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS4 A1 A2 A3 Note: Min 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 Max 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 5 5 1.0 100 5 5 5 0.5 100 5 5 5 0.5 100 5 Reverese Current Test Condition IR (µA) IZ (m A) 5 5 Max 25 25 Dynamic Resistance Test Condition IZ (m A) 5 5 Test Condition rd (Ω) VR (V) 0.5 0.5 Max 100 100 1. Tested with DC. HZS Series Zener Voltage VZ (V)- 1 Type HZS4 Grade B1 B2 B3 C1 C2 C3 HZS5 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS6 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS7 A1 A2 A3 B1 B2 B3 Note: Min 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 Max 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.3 6.4 6.6 6.7 6.9 7.0 7.2 7.3 5 5 5 Reverese Current Test Condition IR (µA) IZ (m A) 5 Max 5 Dynamic Resistance Test Condition IZ (m A) 5 Test Condition rd (Ω) VR (V) 1.0 Max 100 1. Tested with DC. HZS Series Zener Voltage VZ (V)- 1 Type HZS7 Grade C1 C2 C3 HZS9 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS11 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS12 A1 A2 A3 B1 B2 B3 C1 C2 C3 Note: Min 7.2 7.3 7.5 7.7 7.9 8.1 8.3 8.5 8.7 8.9...